Processi ALD per materiali 2D: Introduzione al FlexAl 2D

Atomic layer deposition (ALD) of 2D transition metal dichalcogenides (TMDCs) for nanodevice applications

Our ALD and 2D technical specialists have teamed with the Eindhoven University of Technology research teams to realise ALD of 2D TMDCs for nanodevice applications.

The FlexAL-2D offers a number of benefits for growth of 2D materials:

2D materials growth:

• At CMOS compatible temperatures
• With precise digital thickness control
• Over a large area (200mm wafers)

Robust ALD processes for 2D materials:

• Self-limiting ALD growth
• MoS_2:
  • _​Oxygen and carbon free (<2%)
  • High growth per cycle ~0.1 nm/cycle
  • Crystalline material above 300°C

Tunable morphology: Control over basal plane or edge plane orientation

• Growth of ALD dielectrics & other ALD layers on 2D materials in one tool
  • create advanced 2D device structures
• RF substrate biasing option for film property control